AON6404L N-Channel Enhancement Mode Field Effect Transistor
General Description
The AON6404L combines advanced trench M...
AON6404L N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AON6404L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
-RoHs Compliant -Halogen Free
Features
VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 2.2mΩ (VGS = 10V) RDS(ON) < 3.8mΩ (VGS = 4.5V)
ESD Protected 100% UIS Tested! 100% Rg Tested!
Top View
Fits SOIC8 footprint !
SD SD SD
GD
DFN5X6
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current B,G
TC=25°C TC=100°C
ID
Pulsed Drain Current
IDM
Continuous Drain Current A
TA=25°C TA=70°C
IDSM
Avalanche Current
IAS
Single avalanche energy L=0.1mH
EAS
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum 30 ±20 85 67 ...