AO4314
36V N-Channel MOSFET
General Description
The AO4314 uses trench MOSFET technology that is uniquely optimized to ...
AO4314
36V N-Channel MOSFET
General Description
The AO4314 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "
Schottky style" soft recovery body diode.
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V)
100% UIS Tested 100% Rg Tested
36V 20A < 6mΩ < 8.5mΩ
Top View
D D D D
SOIC-8 Bottom View
D
G
S S S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
TA=25°C Power Dissipation B TA=70°C
VGS
ID
IDM IAS, IAR EAS, EAR
PD
Junction and Storage Temperature Range
TJ, TSTG
G
Maximum 36 ±20 20 16 219 35 61 4.2 2.7
-55 to 150
S
Thermal Characteri...