EDC910D-1100-S5

Data Sheet EDC910D-1100-S5 rev. B 910nm High Power TOP LED Outline and Internal Circuit (Unit : mm) Features Chip Material : AlGaAs Chip Dimension : 1000um * 1000um Number of Chips : 1pce Peak Wavelength : 910nm typ. Lead Frame Die : Ceramics Lens : Silicone Resin Application Absolute Maximum Ratings (Tc=25°C) Item Symbol Ratings Power Dissipation PD 2500 Forward Current IF 1000 Pulse Forward Current IFP 3000 Reverse Voltage VR 5 Thermal Resistance Rthja 10 Junction Temperature Tj 120 Operating Temperature Topr -40 ~ +100 Storage Temperature Tstg -40 ~ +100 Soldering Temperature TSOL 250 ‡Pulse Forward Current condition : Duty 1% and Pulse Width=10us. ‡Soldering condition : Soldering condition must be completed with 5 seconds at 250°C. Optical and Electrical Characteristics (Tc=25°C) Parameter Symbol Min Typ Max Unit Forward Voltage VF VFP 1.8 2.5 2.8 V Total Radiated Power PO 850 2300 mW Radiant Intensity IE ...