Silicon Power Schottky Diode
Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive
MBR40...
Silicon Power
Schottky Diode
Features High Surge Capability Types from 45 V to 100 V VRRM Not ESD Sensitive
MBR40045CT thru MBR400100CTR
VRRM = 45 V - 100 V IF(AV) = 400 A
Twin Tower Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBR40045CT(R) MBR40060CT(R) MBR40080CT(R) MBR400100CT(R) Unit
Repetitive peak reverse voltage RMS reverse voltage
DC blocking voltage Operating temperature Storage temperature
VRRM
VRMS VDC Tj Tstg
45
32 45 -55 to 150 -55 to 150
60
42 60 -55 to 150 -55 to 150
80
57 80 -55 to 150 -55 to 150
100
70 100 -55 to 150 -55 to 150
V
V V °C °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBR40045CT(R) MBR40060CT(R) MBR40080CT(R) MBR400100CT(R) Unit
Average forward current (per pkg)
Peak forward surge current (per leg)
IF(AV) IFSM
TC = 125 °C tp = 8.3 ms, half sine
Maximum forward voltage (per leg)
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