GC2X15MPS12-247

GC2X15MPS12-247 1200 V SiC MPS™ Diode Silicon Carbide Schottky Diode Features  High Avalanche (UIS) Capability  Enhanced Surge Current Capability  Superior Figure of Merit QC/IF  Low Thermal Resistance  175 °C Maximum Operating Temperature  Temperature Independent Switching Behavior  Positive Temperature Coefficient of VF  Extremely Fast Switching Speeds Package Case A A K TO-247-3L VRRM IF (Tc = 135°C) QC = 1200 V = 74 A* = 132 nC* Case A KA Advantages  Low Standby Power Losses  Improved Circuit Efficiency (Lower Overall Cost)  Low Switching Losses  Ease of Paralleling without Thermal Runaway  Smaller Heat Sink Requirements  Low Reverse Recovery Current  Low Device Capacitance  Low Reverse Leakage Current Applications  Boost Diode in Power Factor Correction (PFC)  Switched Mode Power Supply (SMPS)  Uninterruptible Power Supply (UPS)  Motor Drives  Freewheeling / Anti-parallel Diode in Inverters  Solar Invert...