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GC2X10MPS12-247

GeneSiC

Silicon Carbide Schottky Diode


Description
GC2X10MPS12-247 1200 V SiC MPS™ Diode Silicon Carbide Schottky Diode Features  High Avalanche (UIS) Capability  Enhanced Surge Current Capability  Superior Figure of Merit QC/IF  Low Thermal Resistance  175 °C Maximum Operating Temperature  Temperature Independent Switching Behavior  Positive Temperature Coefficient of VF  Extremely Fast Switching S...



GeneSiC

GC2X10MPS12-247

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