GB50SLT12-247
1200 V SiC MPS™ Diode
Silicon Carbide Schottky Diode
Features
High Avalanche (UIS) Capability Enhanced Surge Current Capability Superior Figure of Merit QC/IF Low Thermal Resistance 175 °C Maximum Operating Temperature Temperature Independent Switching Behavior Positive Temperature Coefficient of VF Extremely Fast Switching Spee...
