MURTA40060R

Silicon Super Fast Recovery Diode Features High Surge Capability Types from 600 V to 1200 V VRRM Isolation Type Package Electrically Isolated Base Plate Not ESD Sensitive MURTA40060 thru MURTA400120R VRRM = 600 V - 1200 V IF(AV) = 400 A Heavy Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MURTA40060(R) MURTA400120(R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 600 424 600 -55 to 150 -55 to 150 1200 --1200 -55 to 150 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MURTA40060(R) MURTA400120(R) Average forward current (per pkg) IF(AV) TC = 100 °C Peak forward surge current (per leg) Maximum instantaneous forward voltage (per leg) Maximum instantaneous reverse current at rated DC blocking voltage (per le...