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MURTA200120R

GeneSiC

Silicon Super Fast Recovery Diode


Description
Silicon Super Fast Recovery Diode Features High Surge Capability Types from 600 V to 1200 V VRRM Isolation Type Package Electrically Isolated Base Plate Not ESD Sensitive MURTA20060 thru MURTA200120R VRRM = 600 V - 1200 V IF(AV) = 200 A Heavy Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads re...



GeneSiC

MURTA200120R

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