MURTA60060

Silicon Super Fast Recovery Diode Features High Surge Capability Types up to 600 V VRRM MURTA60020 thru MURTA60060R VRRM = 200 V - 600 V IF = 600 A Heavy Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MURTA60020 (R) MURTA60040 (R) MURTA60060 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage VRRM VRMS VDC 50 100 200 35 71 141 50 100 200 Continuous forward current IF TC ≤ 100 °C 600 600 600 Unit V V V A Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature IF,SM TC = 25 °C, tp = 8.3 ms Tj Tstg 4400 -40 to 175 -40 to 175 4400 -40 to 175 -40 to 175 4400 -40 to 175 -40 to 175 A °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MURTA60020 (R) Diode forward voltage Reverse current Recovery Time Maximum reverse recovery time Thermal charac...