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IGT6E21

GE
Part Number IGT6E21
Manufacturer GE
Description Insulated Gate Bipolar Transistor
Published Feb 11, 2019
Detailed Description mTMlJ~~~ Insulated Gate Bipolar Transistor IGT6D21,E21 20 AMPERES 400, 500 VOLTS EQUIV. ROS(ON) = 0.145 0 This IGT'- T...
Datasheet PDF File IGT6E21 PDF File

IGT6E21
IGT6E21

Overview
mTMlJ~~~ Insulated Gate Bipolar Transistor IGT6D21,E21 20 AMPERES 400, 500 VOLTS EQUIV.
ROS(ON) = 0.
145 0 This IGT'- Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors.
The result is a device that has the high input impedance of MOSFETS and the low on-state conduction losses similar to bipolar transistors.
The device design and gate characteristics ofthe IGT'- Transistor are also similar to power MOSFETS.
An important difference is the equivalent RDS(ON) drain resistance which is modulated to a low value (10 times lower) when the gate is turned on.
The much lower ...


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