mTMIT~~~
insulated Gate Bipolar Transistor
IGT6D20,E20
20 AMPERES 400, 500 VOLTS
EQUIV. RDS(ON) = 0.12 n
This IGT'M Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high input impedance of MO...