mTMlJ~~~
Insulated Gate Bipolar Transistor
Preliminary 26.4 4/85
IGT6D10,E10
10 AMPERES 400, 500 VOLTS EQUIV. RDS(ON) = 0.27 n
This IGT'II Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS·gate turn onloff power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the hig...
