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IGT4E10

GE
Part Number IGT4E10
Manufacturer GE
Description Insulated Gate Bipolar Transistor
Features mTM1J~~~ Insulated Gate Bipolar Transistor IGT4D1 O,E~ ~Jr 10 AMPERES 400, 500 VOLTS EQUIV. RDS(ON) = 0.27 il This IGT...
Published Feb 11, 2019
Datasheet PDF File IGT4E10 PDF File


IGT4E10
IGT4E10


Features
mTM1J~~~ Insulated Gate Bipolar Transistor IGT4D1 O,E~ ~Jr 10 AMPERES 400, 500 VOLTS EQUIV. RDS(ON) = 0.27 il This IGT"" Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best ...



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