mTM1J~~~
Insulated Gate Bipolar Transistor
IGT4D1 O,E~ ~Jr
10 AMPERES 400, 500 VOLTS EQUIV. RDS(ON) = 0.27 il
This IGT"" Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high input impedance ...
