~~D~~
FIELD EFFECT POYIER TRANSISTOR
IRFF232,233
4.5 AMPERES 200, 150 VOLTS
ROS(ON) =0.6 n
Preliminary
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS te'chnology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switch...
