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IRFF210 Dataheets PDF



Part Number IRFF210
Manufacturers GE
Logo GE
Description FIELD EFFECT POWER TRANSISTOR
Datasheet IRFF210 DatasheetIRFF210 Datasheet (PDF)

~D~~ IRFF210,211 FIELD EFFECT POWER TRANSISTOR 2.2 AMPERES 200, 150 VOLTS ROS(ON) =1.5 il Preliminary This series of N-Channel Enhancement-mode' Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating a.

  IRFF210   IRFF210


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~D~~ IRFF210,211 FIELD EFFECT POWER TRANSISTOR 2.2 AMPERES 200, 150 VOLTS ROS(ON) =1.5 il Preliminary This series of N-Channel Enhancement-mode' Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors. Features • Polysilicon gate - Improved stability and reliability • No secondary breakdown - Excellent ruggedness • Ultra-fast switching - Independent of temperature • Voltage controlled - High transconductance • Low input capacitance - Reduced drive requirement • Excellent thermal stability - Ease of paralleling N-CHANNEL ~ CASE STYLE TO-20SAF (.


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