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FIELD EFFECT PO'NER TRANSISTOR
IRFD320,321 D82CQ2.Q1
0.5 AMPERES 400, 350 VOLTS RDS(ON} = 1.8 0
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching...
