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FIELD EFFECT POWER TRANSISTOR
IRFD212,213
0.45 AMPERES 200, 150 VOLTS RDS(ON) = 2.4 il
This series ofN-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applic...
