Plhtetap:s//epvaisnita fsoollnioc.wicno.gjp/UsReLmiacboonu/tel-iatnedsetxi.nhftormlmatiSolo2d0.enr0.±D0i.2p.55DisMcaionn...
Plhtetap:s//epvaisnita fsoollnioc.wicno.gjp/UsReLmiacboonu/tel-iatnedsetxi.nhftormlmatiSolo2d0.enr0.±D0i.2p.55DisMcaionnttiennuaendc
Power
Transistors
2SC5442, 2SC5442A
Silicon
NPN triple diffusion mesa type
For horizontal deflection output
s Features
q High breakdown voltage, and high reliability through the use of a glass passivation layer
q High-speed switching q Wide area of safe operation (ASO)
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO VCES VCEO VEBO ICP IC IB
PC
1500 1500 600
5 20 15 8 100 3.5
Junction temperature Storage temperature
Tj 150 Tstg –55 to +150
Unit V V V V A A A
W
˚C ˚C
1.5
10.0 6.0
26.0±0.5e/
20.0±0.5
Unit: mm
φ 3.3±0.2 5.0±0.3
3.0
2.0 4.0 2.0 3.0
1.5
2.0±0.3 3.0±0.3 1.0±0.2
5.45±0.3 10.9±0.5
1.5 2.7±0.3
0.6±0.2
123
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