~[R1D~LP~
FIELD EFFECT POWER TRANSISTOR
IRF642,643
16 AMPERES 200,150 VOLTS ROS(ON) = 0.22 D.
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applic...
