~D~[F[g1F
FIELD EFFECT POVVER TRANSISTOR
IRF510 9511 D84BL2,K2
4.0 AMPERES 100, 60 VOLTS
ROS(ON) =0.6 0
The IRF510, 51...
~D~[F[g1F
FIELD EFFECT POVVER
TRANSISTOR
IRF510 9511 D84BL2,K2
4.0 AMPERES 100, 60 VOLTS
ROS(ON) =0.6 0
The IRF510, 511 Series is an N-Channel Enhancement-mode Power MOSFET utilizing GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
The IRF510, 511 design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.
Features
Polysilicon gate - Improved stability and reliability
No secondary breakdown - Excellent ruggedness
Ultra-fast switching - Independent of temperature
Voltage controlled - High transconductance
Low input capacitance - Reduced drive requirement
Excellent thermal stability - Ease of paralleling
N-CHANNEL
...