~D~[P~U
FIELD EFFECT POWER TRANSISTOR
IRF430,431 D86DR2,R1
4.SAMPERES SOO, 4S0 VOLTS ROS(ON) = 1.S!l
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching...