CEM1515P

CEM1515P P-Channel Enhancement Mode Field Effect Transistor FEATURES -150V, -2.3A, RDS(ON) = 240mΩ @VGS = -10V. RDS(ON) = 280mΩ @VGS = -6V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -150 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID -2.3 IDM -9.2 Maximum Power Dissipation PD 2.5 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 50 Units V V A A W C Units C/W Details are subject to change without notice . 1 Rev 1. 2018.Dec http://www.cet-mos.com CEM1515P Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown ...