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Si4410DY

International Rectifier

Power MOSFET


Description
PD - 91853C Si4410DY l N-Channel MOSFET l Low On-Resistance l Low Gate Charge l Surface Mount l Logic Level Drive S S S G Description This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low v...



International Rectifier

Si4410DY

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