Si4410DY

N-Channel 30-V (D-S) MOSFET Si4410DY Vishay Siliconix PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.0135 @ VGS = 10 V 30 0.020 @ VGS = 4.5 V ID (A) 10 8 FEATURES D TrenchFETr Power MOSFET D SO-8 S1 S2 S3 G4 8D 7D 6D 5D G Top View Ordering Information: Si4410DY-REVA Si4410DY-T1-REVA (with Tape and Reel) Si4410DY-REVA-E3 (Lead free) Si4410DY-T1-A-E3 (Lead free with Tape and Reel) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C VDS VGS ID IDM IS PD TJ, Tstg 30 "20 10 8 50 2.3 2.5 1.6 - 55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on FR4 Board, t v 10 sec. Doc...