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SJMN90R1K2I

N-Channel MOSFET

Description

SJMN90R1K2I N-Ch Trench MOSFET Power Switching Application Features Drain-source breakdown voltage: BVDSS=900V Low gate charge device: Qg=13nC (Typ.) Low drain-source On-resistance: RDS(on)=1Ω (Typ.) Advanced trench process technology High avalanche energy, 100% test Ordering Information Part Number Marking Package SJMN90R1K2I SJMN90R1K2 M...

KODENSHI KOREA

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SJMN90R1K2I N-Channel MOSFET - KODENSHI KOREA

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