SMK1080FD

SMK1080FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features  Drain-Source breakdown voltage: BVDSS=800V  Low gate charge: Qg=58nC (Typ.)  Low drain-source On resistance: RDS(on)=1.1Ω (Max.)  RoHS compliant device  100% avalanche tested Ordering Information Part Number Marking Package SMK1080FD SMK1080 TO-220F-3L GDS TO-220F-3L Marking Information AAUUKK SM△ΔKY1YM0MD8DD0D SDB20D45 Column 1: Manufacturer Column 2: Production Information e.g.) △YMDD -. △: Factory Management Code -. YMDD: Date Code (Year, Month, Date) Column 3: Device Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) * Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junction temperature Storage temperature range VDSS VGSS ID Tc=25C Tc=100C IDM EAS I...