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SJMN05S60FD

N-Channel Super Junction MOSFET

Description

SJMN05S60FD Super Junction MOSFET N-Channel Super Junction MOSFET Features  Drain-Source voltage: VDS=650V (@TJ=150C)  Low drain-source On resistance: RDS(on)=0.7Ω (Typ.)  Ultra low gate charge: Qg=7nC(Typ.)  RoHS compliant device  100% avalanche tested Ordering Information Part Number Marking Package SJMN05S60FD SJMN05S60 TO-220F-3L GDS TO-2...

KODENSHI KOREA

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SJMN05S60FD N-Channel Super Junction MOSFET - KODENSHI KOREA

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