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IFN410
N-Channel Matched Dual Silicon Junction Field-Effect Transistor
Description
8/2014 IFN410, IFN411, IFN412 N-Channel Matched Dual Silicon Junction Field-Effect
Transistor
∙ Improved Replacements for the U410, U411, & U412 ∙ Low Noise Differential Amplifier ∙ Differential Amplifier ∙ Wide-Band Amplifier Absolute maximum ratings at TA = 25oC Reverse Gate Source & Gate Drain Voltage -40V Continuous Forward Gate Current 50 mA Cont...
InterFET
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