D1126

2SD1126(K) Silicon NPN Triple Diffused Application Power switching Outline TO-220AB 1 23 1. Base 2. Collector (Flange) 3. Emitter 2 1 1.5 kΩ (Typ) 130 Ω (Typ) 3 ID 2SD1126(K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * 1 Tj Tstg ID Ratings 120 120 7 10 15 50 150 –55 to +150 10 Unit V V V A A W °C °C A Electrical Characteristics (Ta = 25°C) Item Symbol Min Collector to emitter breakdown V(BR)CEO voltage 120 Emitter to base breakdown voltage V(BR)EBO 7 Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Turn on time Turn off time Note: 1. Pulse test. I CBO I CEO hFE VCE(sat)...