SL150N03Q

N-Channel Power MOSFET General Features  VDS =30V,ID =150A RDS(ON) <1.6 mΩ @ VGS=10V RDS(ON) <2.4 mΩ @ VGS=4.5V  Improved dv/dt capability  High density cell design for ultra low Rdson  Good stability and uniformity with high EAS  Excellent package for good heat dissipation Applications  Power switching application  MB/VGA/Server Vcore  POL Applications SL150N03Q Schematic diagram DFN5X6-8L top view Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous (TC=25℃) Drain Current-Continuous (TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID(25℃) ID (100℃) IDM PD TJ,TSTG Limit 30 ±20 150 82 520 166 1.33 -55 To 175 Unit V V A A A W W/℃ ℃ www.slkormicro.com 1 Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC Electrical Characteristics (TC=25℃unless ot...