FDB2532-F085

MOSFET – N-Channel, POWERTRENCH) 150 V, 79 A, 16 mW FDB2532-F085 Features RDS(ON) = 14 mW (Typ.), VGS = 10 V, ID = 33 A Qg (tot) = 82 nC (Typ.), VGS = 10 V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant Applications DC/DC converters and Off−Line UPS Distributed Power Architectures and VRMs Primary Switch for 24 V and 48 V Systems High Voltage Synchronous Rectifier Direct Injection / Diesel Injection Systems 42 V Automotive Load Control Electronic Valve Train Systems Synchronous Rectification DATA SHEET www.onsemi.com D G S DRAIN (FLANGE) GATE SOURCE D2PAK−3 CASE 418AJ MARKING DIAGRAM &Z&3&K FDB2532 &Z &3 &K FDB2532 = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2010 1 April, 2023 − Rev. 3 Publication Order Number: FDB2532−F085/D FDB2532−F085 MOSFET MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter Value Unit VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current − Continuous (TC = 25°C, VGS = 10 V) − Continuous (TC = 100°C, VGS = 10 V) − Continuous (Tamb = 25°C, VGS = 10 V, RqJA = 43°C/W) 150 V ±20 V 79 A 56 8 A ID Drain Current − Pulsed EAS Single Pulse Avalanche Energy (Note 1) PD Po...