NDS7002A

N-Channel Enhancement Mode Field Effect Transistor 2N7000, 2N7002, NDS7002A Description These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. These products are particularly suited for low−voltage, low−current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features  High Density Cell Design for Low RDS(on)  Voltage Controlled Small Signal Switch  Rugged and Reliable  High Saturation Current Capability  This Device is Pb−Free and Halogen Free DATA SHEET www.onsemi.com D G S 123 TO−92 CASE 135AN 1 2 3 1 − Source 2 − Gate 3 − Drain TO−92 CASE 135AR MARKING DIAGRAM $Y&Z&3 2N 7000 $Y = onsemi Logo &Z = Assembly Plant Code &3 = Date Code 2N7000 = Specific Device Code 3 1 2 SOT−23 CASE 318−08 1 − Gate 2 − Source 3 − Drain MARKING DIAGRAM 702MG G 702 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet.  Semiconductor Components Industries, LLC, 1998 1 May, 2023 − Rev. 9 Publication Order Number: NDS7002A/D 2N7000, 2N7002, NDS7002A ABSOLUTE MAXIMUM RATINGS Values are at TC = 25C unless otherwise noted. Value Symbol Parameter 2N7000 2N700...