Document
STP7N105K5, STU7N105K5, STW7N105K5
N-channel 1050 V, 1.4 Ω typ., 4 A MDmesh™ K5 Power MOSFETs in TO-220, IPAK and TO-247 packages
Datasheet - production data
TAB TO-220
TAB
3 2 1
IPAK
3 2 1
TO-247
3 2 1
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
Features
Order code
VDS
RDS(on) max. ID
PTOT
STP7N105K5 STU7N105K5 1050 V 2 Ω 4 A 110 W
STW7N105K5
Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected
Applications
Switching applications
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
S(3)
Order code STP7N105K5 STU7N105K5 STW7N105K5
AM01476v1
Table 1: Device summary
Marking
Package
TO-220
7N105K5
IPA.