STP10N105K5

STF10N105K5, STP10N105K5, STW10N105K5 N-channel 1050 V, 1 Ω typ., 6 A MDmesh™ K5 Power MOSFETs in TO-220, TO-220FP and TO-247 packages Datasheet - production data TAB 3 2 1 TO-220FP 3 2 1 TO-220 Features Order codes STF10N105K5 STP10N105K5 STW10N105K5 VDS 1050 V RDS(on) max. ID PTOT 1.3 Ω 30 W 6 A 130 W 130 W 3 12 TO-247 Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3) AM01476v1  Industry’s lowest RDS(on)  Industry’s best figure of merit (FoM)  Ultra low gate charge  100% avalanche tested  Zener-protected Applications  Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order codes Marking Package Packaging STF10N105K5 STP10N105K5 STW1...