STW8N90K5

STW8N90K5 N-channel 900 V, 0.60 Ω typ., 8 A MDmesh™ K5 Power MOSFET in a TO-247 package Datasheet - production data 3 2 1 TO-247 Figure 1: Internal schematic diagram D(2) G(1) Features Order code STW8N90K5 VDS 900 V RDS(on) max. 0.68 Ω ID 8A  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100% avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. S(3) Order code STW8N90K5 AM15572v1_no_tab Table 1: Device summary Marking Package 8N90K5 TO-247 Packing Tube November 2016 DocID030092 Rev 1 This is information on a product in full production. 1/12 www.st.com Contents Contents STW8N...