Document
STF6N65M2, STP6N65M2, STU6N65M2
N-channel 650 V, 1.2 Ω typ., 4 A MDmesh™ M2 Power MOSFETs in TO-220FP, TO-220 and IPAK packages
Datasheet - preliminary data
TAB
3 2 1
TO-220FP
TAB
3 2 1
TO-220
IPAK
3
2 1
Features
Order codes STF6N65M2 STP6N65M2 STU6N65M2
VDS RDS(on) max
ID
650 V
1.35 Ω
4A
• Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected
Figure 1. Internal schematic diagram , TAB
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
AM15572v1
Order codes STF6N65M2 STP6N65M2 STU6N65M2
Table 1. Device summary
Marking
Package
TO-220FP
6N65M2
TO-220 IPAK
Packaging Tube
August 2014
DocID026776 .