STD2LN60K3

STD2LN60K3, STF2LN60K3, STU2LN60K3 N-channel 600 V, 4 Ω typ., 2 A SuperMESH3™ Power MOSFET in DPAK, TO-220FP and IPAK packages Datasheet — production data Features Order codes VDSS STD2LN60K3 STF2LN60K3 STU2LN60K3 600 V RDS(on) max < 4.5 Ω ID 2A ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Very low intrinsic capacitance ■ Improved diode reverse recovery characteristics ■ Zener-protected PTOT 45 W 20 W 45 W Applications ■ Switching applications TAB 3 1 DPAK TAB 3 2 1 TO-220FP IPAK 3 2 1 Figure 1. Internal schematic diagram D(2,TAB) Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. G(1) S(3) AM01476v1 Table 1. Device summary Order code...