STD3NM60N

STD3NM60N N-channel 600 V, 1.6 Ω, 3.3 A, MDmesh™ II Power MOSFET in DPAK package Datasheet — preliminary data Features Order codes STD3NM60N VDSS @TJmax 650 V RDS(on) max. < 1.8 Ω ID 3.3 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance TAB 3 1 DPAK Applications ■ Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram $OR4!" ' 3 !-V Table 1. Device summary Order codes STD3NM60N Marking 3NM60N Package DPAK Packaging Tape and reel May 2012 Doc ID 023056 Rev 1 This is preliminary information on a new product now in development or undergoing e...