Document
STD5N60M2, STP5N60M2, STU5N60M2
Datasheet
N-channel 600 V, 1.3 Ω typ., 3.5 A, MDmesh™ M2 Power MOSFETs in DPAK, TO-220 and IPAK packages
TAB
DPAK
3 1
TAB
TAB
TO-220
1 23
IPAK
123
D(2, TAB)
G(1)
S(3)
NG1D2TS3Z
Product status links STD5N60M2 STP5N60M2 STU5N60M2
Features
Order code
VDS@ TJmax
STD5N60M2
STP5N60M2
650 V
STU5N60M2
• Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected
RDS(on) max. 1.4 Ω
ID 3.5 A
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.
DS9958 - Rev 5 - October 2018 For further information contact your local STMicroelectronics sales office.
www.st.com
STD5N60M2, STP5.