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STD13N60DM2 Dataheets PDF



Part Number STD13N60DM2
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-channel Power MOSFET
Datasheet STD13N60DM2 DatasheetSTD13N60DM2 Datasheet (PDF)

STD13N60DM2 Datasheet N-channel 600 V, 0.310 Ω typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) Features Order codes VDS RDS(on) max. ID STD13N60DM2 600 V 0.365 Ω 11 A • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description AM01476v1_tab This high-voltage N-channel Power MOSFET i.

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STD13N60DM2 Datasheet N-channel 600 V, 0.310 Ω typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) Features Order codes VDS RDS(on) max. ID STD13N60DM2 600 V 0.365 Ω 11 A • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description AM01476v1_tab This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Product status links STD13N60DM2 Product summary Order code STD13N60DM2 Marking 13N60DM2 Package DPAK Packing Tape and reel DS11596 - Rev 4 - May 2023 For further information contact your local STMicroelectronics sales office. www.st.com 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt (2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range Tj Operating junction temperature range 1. Pulse width limited by safe operating area. 2. ISD ≤ 11 A, di/dt ≤ 900 A/μs; VDS(peak) < V(BR)DSS, VDD=400 V. 3. VDS ≤ 480 V. Table 2. Thermal data Symbol Parameter RthJC Thermal resistance, junction-to-case RthJA (1) Thermal resistance, junction-to-ambient 1. When mounted on FR-4 board of inch², 2oz Cu. Symbol IAR EAS Table 3. Avalanche characteristics Parameter Avalanche current, repetitive or not repetitive (Pulse width limited by Tjmax) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) STD13N60DM2 Electrical ratings Value ±25 11 7 44 110 40 50 -55 to 150 Unit V A A W V/ns °C Value 1.14 50 Unit °C/W Value Unit 2.5 A 340 mJ DS11596 - Rev 4 page 2/17 STD13N60DM2 Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified. Table 4. Static Symbol Parameter Test conditions V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA IDSS IGSS VGS(th) RDS(on) Zero gate voltage drain current Gate-body leakage current Gate threshold voltage Static drain-source onresistance VGS = 0 V, VDS = 600 V VGS = 0 V, VDS = 600 V, TC = 125 °C (1) VDS = 0 V, VGS = ±25 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 5.5 A 1. Specified by design, not tested in production. Min. Typ. Max. Unit 600 V 1.5 µA 100 ±10 µA 3 4 5 V 0.310 0.365 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance - 730 - Coss Output capacitance VDS = 100 V, f = 1 MHz, VGS = 0 V - 38 - pF Crss Reverse transfer capa.


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