Document
STD13N60DM2
Datasheet
N-channel 600 V, 0.310 Ω typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package
TAB 23 1
DPAK D(2, TAB)
G(1)
S(3)
Features
Order codes
VDS
RDS(on) max.
ID
STD13N60DM2
600 V
0.365 Ω
11 A
• Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected
Applications
• Switching applications
Description AM01476v1_tab
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Product status links STD13N60DM2
Product summary
Order code
STD13N60DM2
Marking
13N60DM2
Package
DPAK
Packing
Tape and reel
DS11596 - Rev 4 - May 2023 For further information contact your local STMicroelectronics sales office.
www.st.com
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS
Gate-source voltage
Drain current (continuous) at TC = 25 °C ID
Drain current (continuous) at TC = 100 °C
IDM (1)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
dv/dt (2)
Peak diode recovery voltage slope
dv/dt(3)
MOSFET dv/dt ruggedness
Tstg
Storage temperature range
Tj
Operating junction temperature range
1. Pulse width limited by safe operating area. 2. ISD ≤ 11 A, di/dt ≤ 900 A/μs; VDS(peak) < V(BR)DSS, VDD=400 V. 3. VDS ≤ 480 V.
Table 2. Thermal data
Symbol
Parameter
RthJC
Thermal resistance, junction-to-case
RthJA (1)
Thermal resistance, junction-to-ambient
1. When mounted on FR-4 board of inch², 2oz Cu.
Symbol IAR EAS
Table 3. Avalanche characteristics
Parameter Avalanche current, repetitive or not repetitive (Pulse width limited by Tjmax) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
STD13N60DM2
Electrical ratings
Value ±25 11
7 44 110 40 50
-55 to 150
Unit V A A W
V/ns
°C
Value 1.14 50
Unit °C/W
Value
Unit
2.5
A
340
mJ
DS11596 - Rev 4
page 2/17
STD13N60DM2
Electrical characteristics
2
Electrical characteristics
TC = 25 °C unless otherwise specified.
Table 4. Static
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown voltage
VGS = 0 V, ID = 1 mA
IDSS
IGSS VGS(th) RDS(on)
Zero gate voltage drain current
Gate-body leakage current Gate threshold voltage Static drain-source onresistance
VGS = 0 V, VDS = 600 V VGS = 0 V, VDS = 600 V, TC = 125 °C (1) VDS = 0 V, VGS = ±25 V VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 5.5 A
1. Specified by design, not tested in production.
Min. Typ. Max. Unit
600
V
1.5 µA
100
±10 µA
3
4
5
V
0.310 0.365 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Input capacitance
-
730
-
Coss
Output capacitance
VDS = 100 V, f = 1 MHz, VGS = 0 V
-
38
-
pF
Crss
Reverse transfer capa.