N-CHANNEL POWER MOSFET
STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2
N-channel 600 V, 0.135 Ω typ., 22 A MDmesh™ M2 Power MOSFETs in D²PAK, I²...
Description
STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2
N-channel 600 V, 0.135 Ω typ., 22 A MDmesh™ M2 Power MOSFETs in D²PAK, I²PAK, TO-220 and TO-247
Datasheet - production data
Features
Order code STB28N60M2 STI28N60M2 STP28N60M2 STW28N60M2
VDS @ TJmax 650 V
RDS(on) max. 0.150 Ω
ID 22 A
Figure 1: Internal schematic diagram
D (2 TAB )
Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected
Applications
Switching applications LCC converters, resonant converters
Description
These devices are N-channel Power MOSFETs
G(1)
developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical
structure, these devices exhibit low on-resistance
and optimized switching characteristics,
rendering them suitable for the most demanding
high efficiency converters.
S(3)
AM15572V1
Order code STB28N60M2 STI28N60M2 STP28N60M2 STW28N60M2
Table 1: Device summary
Marking
Package
D²PAK
2...
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