STB34NM60N

STB34NM60N, STP34NM60N N-channel 600 V, 0.092 Ω, 31.5 A MDmesh™ II Power MOSFETs in D²PAK and TO-220 packages Datasheet - production data Features TAB 2 3 1 D2PAK TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram '7$% *6 Order codes VDSS STB34NM60N 600 V STP34NM60N RDS(on) 0.105 Ω ID PTOT 31.5 A 250 W 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Applications Switching applications Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. $0Y Order codes STB34NM60N STP34NM60N Table 1. Device summary Marking Packages 34NM60N D2PAK TO-220 Packaging Tape and reel Tube March 2015 This is inform...