STW48N60M2-4

STW48N60M2-4 Datasheet N-channel 600 V, 60 mΩ typ., 42 A MDmesh M2 Power MOSFET in a TO247‑4 package Gate(4) Driver source (3) 2 34 1 TO247-4 Drain(1, TAB) Features Order code VDS @ TJmax. RDS(on)max. ID STW48N60M2-4 650 V 70 mΩ 42 A Excellent switching performance thanks to the extra driving source pin Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested Zener-protected Applications Switching applications Power source (2) AM10177v2Z Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status STW48N60M2-4 Device summary Order code STW48N60M2-4 Marking 48N60M2 Package TO247-4 Packing Tube DS10507 - Rev 4 - April 2020 For further information contact your local STMicroelectronics sales office. www.st.com STW48N60M2-4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt (2) Peak diode recovery voltage slope dv/dt (3) MOSFET dv/dt ruggedness Tstg Storage temperature range Tj Operating junction temper...