STW68N60M6

STW68N60M6 Datasheet N-channel 600 V, 35 mΩ typ., 63 A MDmesh™ M6 Power MOSFET in a TO-247 package 3 2 1 TO-247 D(2, TAB) G(1) Features Order code VDS RDS(on) max. STW68N60M6 600 V 41 mΩ Reduced switching losses Lower RDS(on) per area vs previous generation Low gate input resistance 100% avalanche tested Zener-protected Applications Switching applications LLC converters Boost PFC converters ID 63 A DescriptionS(3) AM01475V1 The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. Maturity status link STW68N60M6 Device summary Order code STW68N60M6 Marking 68N60...