N-CHANNEL POWER MOSFET
STD110N8F6
N-channel 80 V, 0.0056 Ω typ.,80 A, STripFET™ F6 Power MOSFET in a DPAK package
Datasheet - production data
...
Description
STD110N8F6
N-channel 80 V, 0.0056 Ω typ.,80 A, STripFET™ F6 Power MOSFET in a DPAK package
Datasheet - production data
Features
Order code VDS RDS(on)max ID PTOT 7$% STD110N8F6 80 V 0.0065 Ω 80 A 167 W
'3$.
Figure 1. Internal schematic diagram
'7$%
*
Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss
Applications
Switching applications
Description
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
6
Order code STD110N8F6
$0Y
Table 1. Device summary
Marking
Package
110N8F6
DPAK
Packing Tube
December 2014
This is information on a product in full production.
DocID027274 Rev 1
1/16
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Contents
Contents
STD110N8F6
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical ...
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