STH145N8F7-2AG

STH145N8F7-2AG Automotive-grade N-channel 80 V, 3.3 mΩ typ., 90 A STripFET™ F7 Power MOSFET in a H²PAK-2 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code STH145N8F7-2AG VDS 80 V RDS(on) max. 4 mΩ ID 90 A PTOT 200 W  Designed for automotive applications and AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent figure of merit (FoM)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STH145N8F7-2AG Table 1: Device summary Marking Package 145N8F7 H²PAK-2 Packaging Tape and reel June 2015 DocID027933 Rev 1 This is information on a product in full production. 1/16 www.st.com ...