Document
STH240N75F3-2, STH240N75F3-6
N-channel 75 V, 2.6 mΩ typ., 180 A STripFET™ III Power MOSFET in H²PAK-2 and H²PAK-6 packages
Datasheet − production data
Features
Order code
STH240N75F3-2 STH240N75F3-6
VDSS 75 V
RDS(on) max.
ID
< 3.0 mΩ 180 A
■ Conduction losses reduced ■ Low profile, very low parasitic inductance
Applications
■ Switching application
Description
These devices are N-channel enhancement mode Power MOSFETs produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance.
TAB
H2PAK-2
7
1
H2PAK-6
Figure 1. Internal schematic diagram
D(TAB)
D(TAB)
G(1)
G(1)
Table 1. Device summary Order code
STH240N75F3-2 STH240N75F3-6
Marking 240N75F3
S(2, 3) H2PAK-2
Package H2PAK-2 H2PAK-6
S(2, 3, 4, 5, 6, 7) H2PAK-6
AM14551V1
Packaging Tape and reel
July 2012
This is information on a product in full production.
Doc ID 18486 Rev 2
1/18
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