STP100N6F7

STP100N6F7 N-channel 60 V, 4.7 mΩ typ.,100 A STripFET™ F7 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STP100N6F7 60 V 5.6 mΩ 100A 125 W TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram '7$% * Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 6 $0Y Order code STP100N6F7 Table 1. Device summary Marking Package 100N6F7 TO-220 Packaging Tube December 2014 This is information on a product in full production. DocID027212 Rev 2 1/13 www.st.com Contents Contents STP100N6F7 1 Electrical ratings . . ...